Флэш память S29GL512S11TFA02 панели приборов Mercedes-Benz GLA AMG I (X156) Рестайлинг 2017
Характеристики
Параметр | Значение |
---|---|
Артикул | 008792 |
Модель и марка | Mercedes-Benz GLA AMG I (X156) Рестайлинг 2017 |
Количество на складе | уточняйте у менеджера |
Количество просмотров | 207 |
Описание
В нашем интернет магазине Вы можете купить флэш память SPANSION S29GL512N панели приборов Mercedes-Benz GLA AMG I (X156) Рестайлинг 2017, а так же воспользоваться услугой по ремонту приборной панели Mercedes-Benz GLA AMG I (X156) Рестайлинг 2017
Distinctive Characteristics
Architectural Advantages
- Single power supply operation
— 3 volt read, erase, and program operations - Enhanced VersatileI/O™ control
— All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input. VIO range is 1.65 to VCC - Manufactured on 110 nm MirrorBit process technology
- SecSi™ (Secured Silicon) Sector region
— 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence
— May be programmed and locked at the factory or by the customer - Flexible sector architecture
— S29GL512N: Five hundred twelve 64 Kword (128 Kbyte) sectors
— S29GL256N: Two hundred fifty-six 64 Kword (128 Kbyte) sectors
— S29GL128N: One hundred twenty-eight 64 Kword (128 Kbyte) sectors - Compatibility with JEDEC standards
— Provides pinout and software compatibility for singlepower supply flash, and superior inadvertent write protection - 100,000 erase cycles per sector
- 20-year data retention
Performance Characteristics - High performance
— 80 ns access time (S29GL128N, S29GL256N),
90 ns access time (S29GL512N)
— 8-word/16-byte page read buffer
— 16-word/32-byte write buffer
— 25 ns page read times
— 16-word/32-byte write buffer reduces overall programming time for multiple-word updates - Low power consumption (typical values at 3.0 V, 5 MHz)
— 30 mA typical interpage active read current; 10 mA typical intrapage active read current
— 50 mA typical erase/program current
— 1 µA typical standby mode current - Package options
—56-pin TSOP/RTSOP 56-pin TSOP/RTSOP — 64-ball Fortified BGA56-pin TSOP/RTSOP
— 64-ball Fortified BGA
Software & Hardware Features
- Software features
— Program Suspend & Resume: read other sectors before programming operation is completed
— Erase Suspend & Resume: read/program other sectors before an erase operation is completed
— Data# polling & toggle bits provide status
— Unlock Bypass Program command reduces overall multiple-word or byte programming time
— CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices - Hardware features
— Advanced Sector Protection
— WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) detects program or erase cycle completion
Телефон для связи: +7 (966) 099-30-36
Наш адрес: Москва, ул. Алтуфьевское шоссе д. 31 стр. 1 (схема проездасхема проезда)